IPD100N04S4-02 MOSFET

IPD100N04S4-02 IPD100N04S4-02

IPD100N04S4-02 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD100N04S4-02
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Drain Current: 100 A
  • Maximum Drain-Source On-State Resistance: 0.002 Ohm
  • Total Gate Charge: 118 nC
  • Maximum Power Dissipation: 150 W
  • Package: PGTO252