IPD12CN10NG MOSFET

IPD12CN10NG IPD12CN10NG

IPD12CN10NG MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD12CN10NG
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 67 A
  • Maximum Drain-Source On-State Resistance: 0.0124 Ohm
  • Total Gate Charge: 49 nC
  • Maximum Power Dissipation: 100 W
  • Package: DPAK_TO252