IPD180N10N3G MOSFET

IPD180N10N3G IPD180N10N3G

IPD180N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD180N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 43 A
  • Maximum Drain-Source On-State Resistance: 0.018 Ohm
  • Total Gate Charge: 19 nC
  • Maximum Power Dissipation: 71 W
  • Package: DPAK_TO252