IPD25N06S4L-30 MOSFET
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IPD25N06S4L-30 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPD25N06S4L-30
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 60 V
- Maximum Drain Current: 25 A
- Maximum Drain-Source On-State Resistance: 0.03 Ohm
- Total Gate Charge: 16.3 nC
- Maximum Power Dissipation: 29 W
- Package: PGTO252