IPD30N03S2L-10 MOSFET

IPD30N03S2L-10 IPD30N03S2L-10

IPD30N03S2L-10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD30N03S2L-10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Drain Current: 30 A
  • Maximum Drain-Source On-State Resistance: 0.01 Ohm
  • Total Gate Charge: 42 nC
  • Maximum Power Dissipation: 100 W
  • Package: PGTO252