IPD30N03S4L-09 MOSFET
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IPD30N03S4L-09 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPD30N03S4L-09
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 30 V
- Maximum Drain Current: 30 A
- Maximum Drain-Source On-State Resistance: 0.009 Ohm
- Total Gate Charge: 20 nC
- Maximum Power Dissipation: 42 W
- Package: PGTO252