IPD30N06S2L-13 MOSFET

IPD30N06S2L-13 IPD30N06S2L-13

IPD30N06S2L-13 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD30N06S2L-13
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 30 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.013 Ohm
  • Total Gate Charge: 69 nC
  • Maximum Power Dissipation: 136 W
  • Package: PGTO252