IPD320N20N3G MOSFET

IPD320N20N3G IPD320N20N3G

IPD320N20N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD320N20N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Drain Current: 34 A
  • Maximum Drain-Source On-State Resistance: 0.032 Ohm
  • Total Gate Charge: 22 nC
  • Maximum Power Dissipation: 136 W
  • Package: DPAK_TO252