IPD35N10S3L-26 MOSFET
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IPD35N10S3L-26 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPD35N10S3L-26
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 100 V
- Maximum Drain Current: 35 A
- Maximum Drain-Source On-State Resistance: 0.024 Ohm
- Total Gate Charge: 39 nC
- Maximum Power Dissipation: 71 W
- Package: PGTO252