IPD50N04S3-08 MOSFET
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IPD50N04S3-08 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPD50N04S3-08
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 40 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 50 A
- Maximum Operating Junction Temperature: 175 °C
- Maximum Drain-Source On-State Resistance: 0.0075 Ohm
- Total Gate Charge: 35 nC
- Maximum Power Dissipation: 68 W
- Package: PGTO252