IPD50N04S4-10 MOSFET

IPD50N04S4-10 IPD50N04S4-10

IPD50N04S4-10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD50N04S4-10
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Drain Current: 50 A
  • Maximum Drain-Source On-State Resistance: 0.0093 Ohm
  • Total Gate Charge: 18.2 nC
  • Maximum Power Dissipation: 41 W
  • Package: PGTO252