IPD50N06S4-09 MOSFET

IPD50N06S4-09 IPD50N06S4-09

IPD50N06S4-09 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD50N06S4-09
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 50 A
  • Maximum Drain-Source On-State Resistance: 0.009 Ohm
  • Total Gate Charge: 47 nC
  • Maximum Power Dissipation: 71 W
  • Package: PGTO252