IPD50N06S4L-12 MOSFET

IPD50N06S4L-12 IPD50N06S4L-12

IPD50N06S4L-12 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD50N06S4L-12
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 50 A
  • Maximum Drain-Source On-State Resistance: 0.012 Ohm
  • Total Gate Charge: 40 nC
  • Maximum Power Dissipation: 50 W
  • Package: PGTO252