IPD60R3K3C6 MOSFET

IPD60R3K3C6 IPD60R3K3C6
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IPD60R3K3C6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD60R3K3C6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.5 V
  • Maximum Drain Current: 1.7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 3.3 Ohm
  • Maximum Power Dissipation: 18.1 W
  • Package: DPAK_TO252

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