IPD60R750E6 MOSFET

IPD60R750E6 IPD60R750E6

IPD60R750E6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD60R750E6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 5.7 A
  • Maximum Drain-Source On-State Resistance: 0.75 Ohm
  • Total Gate Charge: 17.2 nC
  • Maximum Power Dissipation: 48 W
  • Package: DPAK_TO252