IPD70N10S3L-12 MOSFET

IPD70N10S3L-12 IPD70N10S3L-12
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IPD70N10S3L-12 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD70N10S3L-12
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.4 V
  • Maximum Drain Current: 70 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0115 Ohm
  • Total Gate Charge: 77 nC
  • Maximum Power Dissipation: 125 W
  • Package: PGTO252

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