IPD90R1K2C3 MOSFET

IPD90R1K2C3 IPD90R1K2C3
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IPD90R1K2C3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD90R1K2C3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 900 V
  • Maximum Drain Current: 5.1 A
  • Maximum Drain-Source On-State Resistance: 1.2 Ohm
  • Total Gate Charge: 28 nC
  • Maximum Power Dissipation: 83 W
  • Package: DPAK_TO252

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