IPI086N10N3G MOSFET

IPI086N10N3G IPI086N10N3G
TransistorData.com is not an official representative or the creator of the MOSFET IPI086N10N3G Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official IPI086N10N3G transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

IPI086N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPI086N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0086 Ohm
  • Total Gate Charge: 42 nC
  • Maximum Power Dissipation: 125 W
  • Package: I2PAK_TO262

Top IPI086N10N3G Equivalent Transistors