IPI65R600C6 MOSFET


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IPI65R600C6 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPI65R600C6
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 650 V
- Maximum Drain Current: 7.3 A
- Maximum Drain-Source On-State Resistance: 0.6 Ohm
- Total Gate Charge: 23 nC
- Maximum Power Dissipation: 63 W
- Package: I2PAK_TO262