IPI90R800C3 MOSFET

IPI90R800C3 IPI90R800C3
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IPI90R800C3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPI90R800C3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 900 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.5 V
  • Maximum Drain Current: 6.9 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.8 Ohm
  • Total Gate Charge: 42 nC
  • Maximum Power Dissipation: 104 W
  • Package: I2PAK_TO262

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