IPP023N10N5 MOSFET

IPP023N10N5 IPP023N10N5
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IPP023N10N5 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPP023N10N5
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 023N10N5
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.8 V
  • Maximum Drain Current: 120 A
  • Drain-Source Capacitance: 1810 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 26 nS
  • Maximum Drain-Source On-State Resistance: 0.0023 Ohm
  • Total Gate Charge: 168 nC
  • Maximum Power Dissipation: 375 W
  • Package: TO-220

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