IPP023NE7N3G MOSFET

IPP023NE7N3G IPP023NE7N3G

IPP023NE7N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPP023NE7N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 75 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.8 V
  • Maximum Drain Current: 100 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0023 Ohm
  • Total Gate Charge: 155 nC
  • Maximum Power Dissipation: 300 W
  • Package: TO220