IPW50R190CE MOSFET

IPW50R190CE IPW50R190CE

IPW50R190CE MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPW50R190CE
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 5R190CE
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.5 V
  • Maximum Drain Current: 18.5 A
  • Drain-Source Capacitance: 68 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8.5 nS
  • Maximum Drain-Source On-State Resistance: 0.19 Ohm
  • Maximum Power Dissipation: 127 W
  • Package: TO-247