IPW60R041C6 MOSFET

IPW60R041C6 IPW60R041C6
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IPW60R041C6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPW60R041C6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 77.5 A
  • Maximum Drain-Source On-State Resistance: 0.041 Ohm
  • Total Gate Charge: 290 nC
  • Maximum Power Dissipation: 481 W
  • Package: TO247

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