IRF100S201 MOSFET

IRF100S201 IRF100S201
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IRF100S201 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF100S201
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 192 A
  • Drain-Source Capacitance: 660 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 97 nS
  • Maximum Drain-Source On-State Resistance: 0.0042 Ohm
  • Total Gate Charge: 170 nC
  • Maximum Power Dissipation: 441 W
  • Package: TO-263

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