IRF1010A MOSFET

IRF1010A IRF1010A
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IRF1010A MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF1010A
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 84 A
  • Drain-Source Capacitance: 420 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 90 nS
  • Maximum Drain-Source On-State Resistance: 0.0085 Ohm
  • Total Gate Charge: 58 nC
  • Maximum Power Dissipation: 140 W
  • Package: TO-220AB

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