IRF1010E MOSFET

IRF1010E IRF1010E
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IRF1010E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF1010E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Drain Current: 81 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.012 Ohm
  • Total Gate Charge: 130 nC
  • Maximum Power Dissipation: 170 W
  • Package: TO220AB

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