IRF640N MOSFET

IRF640N IRF640N

IRF640N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF640N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 18 A
  • Maximum Drain-Source On-State Resistance: 0.15 Ohm
  • Total Gate Charge: 44.7 nC
  • Maximum Power Dissipation: 150 W
  • Package: TO220AB