IRF6603 MOSFET

IRF6603 IRF6603

IRF6603 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF6603
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 28 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.0039 Ohm
  • Total Gate Charge: 86 nC
  • Maximum Power Dissipation: 5 W
  • Package: DIRECTFET