IRF6607 MOSFET

IRF6607 IRF6607

IRF6607 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF6607
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 27 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.0033 Ohm
  • Total Gate Charge: 50 nC
  • Maximum Power Dissipation: 3.6 W
  • Package: DIRECTFET