IRF6608 MOSFET

IRF6608 IRF6608

IRF6608 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF6608
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 13 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.009 Ohm
  • Maximum Power Dissipation: 2.1 W
  • Package: DIRECTFET