IRF6691 MOSFET

IRF6691 IRF6691

IRF6691 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF6691
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Drain Current: 180 A
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.0018 Ohm
  • Total Gate Charge: 47 nC
  • Maximum Power Dissipation: 89 W
  • Package: DIRECTFET