IRF7807VD2 MOSFET

IRF7807VD2 IRF7807VD2
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IRF7807VD2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF7807VD2
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 8.3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 1.2 nS
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Maximum Power Dissipation: 2.5 W
  • Package: SO8

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