IRF7807Z MOSFET

IRF7807Z IRF7807Z

IRF7807Z MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF7807Z
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.25 V
  • Maximum Drain Current: 11 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6.2 nS
  • Maximum Drain-Source On-State Resistance: 0.0138 Ohm
  • Maximum Power Dissipation: 2.5 W
  • Package: SO8