IRF7831 MOSFET

IRF7831 IRF7831
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IRF7831 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF7831
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 2.35 V
  • Maximum Drain Current: 21 A
  • Drain-Source Capacitance: 980 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5.3 nS
  • Maximum Drain-Source On-State Resistance: 0.0036 Ohm
  • Total Gate Charge: 40 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SO8

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