IRF8010S MOSFET

IRF8010S IRF8010S
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IRF8010S MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF8010S
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 80 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.015 Ohm
  • Total Gate Charge: 81 nC
  • Maximum Power Dissipation: 260 W
  • Package: D2PAK

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