IRF8113 MOSFET

IRF8113 IRF8113

IRF8113 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF8113
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.2 V
  • Maximum Drain Current: 17.2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8.9 nS
  • Maximum Drain-Source On-State Resistance: 0.006 Ohm
  • Total Gate Charge: 24 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SO8