IRF8788 MOSFET

IRF8788 IRF8788

IRF8788 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRF8788
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.35 V
  • Maximum Drain Current: 24 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 24 nS
  • Maximum Drain-Source On-State Resistance: 0.0028 Ohm
  • Total Gate Charge: 44 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SO8