IRFB812 MOSFET

IRFB812 IRFB812

IRFB812 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRFB812
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 3.6 A
  • Maximum Drain-Source On-State Resistance: 2.2 Ohm
  • Maximum Power Dissipation: 78 W
  • Package: TO220AB