IRFSL59N10D MOSFET

IRFSL59N10D IRFSL59N10D

IRFSL59N10D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IRFSL59N10D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5.5 V
  • Maximum Drain Current: 59 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Total Gate Charge: 76 nC
  • Maximum Power Dissipation: 200 W
  • Package: TO262