K2611SB MOSFET

K2611SB K2611SB
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K2611SB MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: K2611SB
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 900 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 1.35 Ohm
  • Total Gate Charge: 58 nC
  • Maximum Power Dissipation: 276 W
  • Package: TO-3PB

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