KDB2570 MOSFET

KDB2570 KDB2570
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KDB2570 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB2570
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 150 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 22 A
  • Drain-Source Capacitance: 106 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 0.08 Ohm
  • Total Gate Charge: 40 nC
  • Maximum Power Dissipation: 93 W
  • Package: TO-263

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