KDB3632 MOSFET

KDB3632 KDB3632
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KDB3632 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB3632
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 80 A
  • Drain-Source Capacitance: 820 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 39 nS
  • Maximum Drain-Source On-State Resistance: 0.009 Ohm
  • Total Gate Charge: 84 nC
  • Maximum Power Dissipation: 310 W
  • Package: TO-263

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