KDB3652 MOSFET

KDB3652 KDB3652
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KDB3652 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB3652
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 61 A
  • Drain-Source Capacitance: 390 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 85 nS
  • Maximum Drain-Source On-State Resistance: 0.016 Ohm
  • Total Gate Charge: 41 nC
  • Maximum Power Dissipation: 150 W
  • Package: TO-263

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