KDB3672 MOSFET

KDB3672 KDB3672

KDB3672 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB3672
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 44 A
  • Drain-Source Capacitance: 247 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 59 nS
  • Maximum Drain-Source On-State Resistance: 0.028 Ohm
  • Total Gate Charge: 24 nC
  • Maximum Power Dissipation: 120 W
  • Package: TO-263