KDB4020P MOSFET

KDB4020P KDB4020P
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KDB4020P MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB4020P
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 16 A
  • Drain-Source Capacitance: 270 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 24 nS
  • Maximum Drain-Source On-State Resistance: 0.08 Ohm
  • Total Gate Charge: 9.5 nC
  • Maximum Power Dissipation: 37.5 W
  • Package: TO-263

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