KDB5690 MOSFET

KDB5690 KDB5690
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KDB5690 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB5690
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 32 A
  • Drain-Source Capacitance: 160 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 9 nS
  • Maximum Drain-Source On-State Resistance: 0.027 Ohm
  • Total Gate Charge: 23 nC
  • Maximum Power Dissipation: 58 W
  • Package: TO-263

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