KDB6030L MOSFET

KDB6030L KDB6030L
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KDB6030L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDB6030L
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 52 A
  • Drain-Source Capacitance: 640 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 150 nS
  • Maximum Drain-Source On-State Resistance: 0.0135 Ohm
  • Total Gate Charge: 34 nC
  • Maximum Power Dissipation: 75 W
  • Package: TO-263

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