KDD6030L MOSFET

KDD6030L KDD6030L
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KDD6030L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDD6030L
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 50 A
  • Drain-Source Capacitance: 325 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 7 nS
  • Maximum Drain-Source On-State Resistance: 0.0145 Ohm
  • Total Gate Charge: 13 nC
  • Maximum Power Dissipation: 56 W
  • Package: TO-252

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