KDR8702H MOSFET

KDR8702H KDR8702H
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KDR8702H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDR8702H
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.5 V
  • Maximum Drain Current: 3.6 A
  • Drain-Source Capacitance: 170 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9 nS
  • Maximum Drain-Source On-State Resistance: 0.038 Ohm
  • Total Gate Charge: 7 nC
  • Maximum Power Dissipation: 0.8 W
  • Package: SOP-8